Role of substrate temperature on structure and magnetization of Cr-implanted GaN thin film

Autor:	Yao Shu-De, Ishaq Ahmad, Li Lin, G. Husnain
Rok vydání:	2014
Předmět:	Magnetization Hysteresis Materials science Magnetic moment Dopant Analytical chemistry General Materials Science General Chemistry Substrate (electronics) Chemical vapor deposition Thin film Fluence
Zdroj:	Applied Physics A. 117:2275-2279
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s00339-014-8658-y
Popis:	Chromium ions implantation was performed into metal–organic chemical vapor deposition grown GaN thin film of thickness about 2 µm at 5 × 1016 cm−2 fluence. Implantation was performed at various substrate temperatures (RT, 250, 350 °C). Rapid thermal annealing was employed at 900 °C to remove implantation-induced damages as well as for activation of dopant. Structural study was performed by Rutherford backscattering and channeling spectrometry and high-resolution X-ray diffraction. To confirm magnetic properties at room temperature, hysteresis loops were obtained using alternating gradient magneto-meter. Well-defined hysteresis loops were achieved at 300 K in implanted and annealed samples. Temperature-dependent magnetization indicated magnetic moment at 5 K and retain up to 380 K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f734e2c6129a14098da6fbada48358b9 https://doi.org/10.1007/s00339-014-8658-y Zobrazit plný text záznamu Plný text ve formátu PDF