An approach for fabricating high-performance inductors on low-resistivity substrates

Autor:	M.R. Frei, S.K. Theiss, L.T. Gomez, C.A. King, A.J. Becker, D. Kossives, Ya-Hong Xie
Rok vydání:	1998
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Inductor Design for manufacturability CMOS chemistry Electrical resistivity and conductivity Q factor Optoelectronics Electrical and Electronic Engineering business Porosity Porous medium
Zdroj:	IEEE Journal of Solid-State Circuits. 33:1433-1438
ISSN:	0018-9200
DOI:	10.1109/4.711344
Popis:	Porous Si layers up to 250 /spl mu/m in thickness are used to isolate spiral inductors from low resistivity substrates. Wafer curvature and secondary ion mass spectroscopy (SIMS) analysis are done to address the manufacturability issue of porous Si. Spiral inductors with a single level Al on 2 in, p-type substrates of 0.008 /spl Omega/-cm resistivity are demonstrated with Q
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f731a5ff2da8547ecab3fa7fda1e11db https://doi.org/10.1109/4.711344 Zobrazit plný text záznamu