NB-IoT and GNSS All-In-One System-On-Chip Integrating RF Transceiver, 23-dBm CMOS Power Amplifier, Power Management Unit, and Clock Management System for Low Cost Solution
| Autor: | Inyup Kang, Jongmi Lee, Seungjin Kim, Jongwoo Lee, Kim Wan, Juyoung Han, Jaeyeol Han, Jong-Soo Lee, Takahiro Nomiyama, Lo Chilun, Sangdon Jung, Thomas Byunghak Cho, Byoungjoong Kang |
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| Rok vydání: | 2020 |
| Předmět: |
business.industry
Computer science 020208 electrical & electronic engineering RF power amplifier Relaxation oscillator Bandwidth (signal processing) Electrical engineering 02 engineering and technology CMOS GNSS applications 0202 electrical engineering electronic engineering information engineering System on a chip Radio frequency Electrical and Electronic Engineering Power Management Unit Transceiver business Crystal oscillator Power management system |
| Zdroj: | IEEE Journal of Solid-State Circuits. 55:3400-3413 |
| ISSN: | 1558-173X 0018-9200 |
| DOI: | 10.1109/jssc.2020.3012742 |
| Popis: | This article presents a fully integrated stand-alone narrowband Internet-of-Things (NB-IoT) and global navigation satellite system (GNSS) system-on-chip (SoC). It aims for an all-in-one system to integrate all necessary blocks such as an RF transceiver, a power management system (PMIP), and a clock management system and to save a bills-of-material (BOM) cost. An RF transceiver is integrated to support multi-band cellular IoT and GNSS with a CMOS RF power amplifier transmitting 23-dBm output power. A PMIP, including bucks, a boost, and low-dropout regulators (LDOs), is integrated to support coin cell or AAA battery and to support a wide input supply voltage range from 2.5 to 5 V. In addition, clock management system is embedded with a digitally controlled crystal oscillator (DCXO), a relaxation oscillator (RCO), and temperature sensor units (TSUs). It is fabricated in a standard 28-nm CMOS process and its size is 24.6 mm2. The power consumption of always-on-block is 15 $\mu \text{W}$ , and the sleep current consumption is less than 10 $\mu \text{A}$ at 3.8 V. |
| Databáze: | OpenAIRE |
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