Effect of the Hf content on the microstructure and ferroelectric properties of HfxZr1−xO2 thin films using an all-inorganic aqueous precursor solution

Autor:	Ziqi Li, Wei Dong, Dayu Zhou, Nana Sun, Jingjing Wang, Feng Liu, Xiaoduo Hou
Rok vydání:	2021
Předmět:	Tetragonal crystal system Aqueous solution Materials science Phase (matter) Analytical chemistry Relative permittivity General Materials Science Orthorhombic crystal system Thin film Microstructure Ferroelectricity
Zdroj:	Nanoscale. 13:16216-16225
ISSN:	2040-3372 2040-3364
DOI:	10.1039/d1nr02667d
Popis:	The synthesis of ferroelectric HfxZr1−xO2 (0 ≤ x ≤ 0.50) thin films by chemical solution deposition (CSD) on the surface of Si (100) substrates using all-inorganic salt precursors, is demonstrated in this study. The effects of the Hf content on the microstructure and ferroelectric properties of the films were investigated. The results showed that as the Hf component increased, the root mean square (RMS) roughness as well as the m-phase proportion gradually improved. Near the main diffraction peak of 30.7°, a phase transition from the orthorhombic to the cubic phase, and then to the tetragonal phase occurred. The best ferroelectric behaviour was obtained in the HfxZr1−xO2 film with a Hf content of 14% after 103 field cycling. The H0.14Z0.86O2 thin film exhibited the highest remanent polarization of 12.1 μC cm−2, accompanied by a relative permittivity of 31.8.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f72860fc32a04f9fddfc5700216e1d68 https://doi.org/10.1039/d1nr02667d Zobrazit plný text záznamu