Wafer fusion bonding and its application to silicon-on-insulator fabrication

Autor:	H G Graf, W. Appel, B. Hofflinger, C Harendt, E. Penteker
Rok vydání:	1991
Předmět:	Engineering drawing Fabrication Materials science Mechanical Engineering Polishing Silicon on insulator Thermal treatment Electronic Optical and Magnetic Materials Grinding Mechanics of Materials Anodic bonding Rapid thermal processing Wafer Electrical and Electronic Engineering Composite material
Zdroj:	Journal of Micromechanics and Microengineering. 1:145-151
ISSN:	1361-6439 0960-1317
Popis:	The principles of the wafer fusion bonding technique at room temperature and with thermal treatment are described. Experiments using plain and patterned silicon wafers coated with different surface materials are presented. Results obtained for different thermal annealing conditions are discussed in terms of homogeneity and strength of the bond. Thinning of the bonded wafers is performed by grinding and polishing or with preferential etch techniques using p+ etchstops. Uniform silicon-on-insulator (SOI) films with thicknesses 1 mu m-30 mu m have been obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f70dd37b0d5f4120a46568dfdeda7f98 https://doi.org/10.1088/0960-1317/1/3/003 Zobrazit plný text záznamu