Amplifier design in weak inversion and strong inversion — A case study
| Autor: | Meghna Madhusudan, R. Yatish, M. Nithin, B. Yashaswini, B. N. Aiyappa |
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| Rok vydání: | 2017 |
| Předmět: |
Physics
021110 strategic defence & security studies Ultra low power Amplifier Transistor 0211 other engineering and technologies Biasing Inversion (meteorology) Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Atmospheric temperature range Topology law.invention law Hardware_INTEGRATEDCIRCUITS Voltage |
| Zdroj: | 2017 International Conference on Communication and Signal Processing (ICCSP). |
| Popis: | This paper presents a systematic procedure for the design of amplifiers using weak inversion (WI) region MOS transistors. The optimization of the design constraints takes into consideration parameters such as Power Supply, Gate-Source Voltage (V GS ), Aspect Ratio, Biasing Voltages and Temperature. The work is supported by a case study on Common Source (CS) amplifiers. The case study provides the results of WI operation constraint — temperature range — and compares it to the operation in Strong Inversion (SI). It also proves that WI can be used for Ultra Low Power application if the temperature range is feasible. |
| Databáze: | OpenAIRE |
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