Measurement and Extraction of Parasitic Parameters of Quasi-Vertical Schottky Diodes at Submillimeter Wavelengths
| Autor: | Alexander Arsenovic, Souheil Nadri, Linli Xie, Masoud Jafari, Matthew F. Bauwens, Robert M. Weikle |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon business.industry Semiconductor device modeling chemistry.chemical_element Schottky diode 020206 networking & telecommunications Electrical element 02 engineering and technology Condensed Matter Physics Gallium arsenide Wavelength chemistry.chemical_compound chemistry 0202 electrical engineering electronic engineering information engineering Optoelectronics Wafer Electrical and Electronic Engineering business Diode |
| Zdroj: | IEEE Microwave and Wireless Components Letters. 29:474-476 |
| ISSN: | 1558-1764 1531-1309 |
| DOI: | 10.1109/lmwc.2019.2918295 |
| Popis: | This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are quasi-vertical gallium arsenide Schottky diodes integrated on silicon. The technique utilizes measurements of coplanar waveguide-fed passive structures in the WR-2.2 band (325–500 GHz), which are fabricated on the same wafer as the diodes. These structures consist of short- and open-circuited terminations that allow direct measurement of the parasitic circuit elements associated with the device. The values of the parasitic elements obtained using this method are in agreement with the values reported in the literature for diodes of comparable geometry. |
| Databáze: | OpenAIRE |
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