Impact ionization in Ga1−xAlxSb
Autor: | S. Kibeya, M. Pérotin, A. Sabir, P. Coudray, H. Luquet, B. Orsal, M. Karim, L. Gouskov |
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Rok vydání: | 1992 |
Předmět: | |
Zdroj: | Applied Physics Letters. 60:3030-3032 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.106799 |
Popis: | We have measured impact ionization rates in Ga1−xAlxSb at x=0 and 0.08. For these Al contents, the ratio values of the spin‐orbit splitting energy Δ to the energy gap Eg are, respectively, greater and lower than unity. We have determined that the ratio of the ionization coefficients kp/kn is greater than unity for both compositions and that it is much lower (kp/kn≊2) than the value (≳10) determined on our layers for x=0.04. Multiplication noise measurements confirm these results. The comparison to other published data show that the ionization in these antimonide compounds is not yet elucidated. |
Databáze: | OpenAIRE |
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