Impact ionization in Ga1−xAlxSb

Autor: S. Kibeya, M. Pérotin, A. Sabir, P. Coudray, H. Luquet, B. Orsal, M. Karim, L. Gouskov
Rok vydání: 1992
Předmět:
Zdroj: Applied Physics Letters. 60:3030-3032
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.106799
Popis: We have measured impact ionization rates in Ga1−xAlxSb at x=0 and 0.08. For these Al contents, the ratio values of the spin‐orbit splitting energy Δ to the energy gap Eg are, respectively, greater and lower than unity. We have determined that the ratio of the ionization coefficients kp/kn is greater than unity for both compositions and that it is much lower (kp/kn≊2) than the value (≳10) determined on our layers for x=0.04. Multiplication noise measurements confirm these results. The comparison to other published data show that the ionization in these antimonide compounds is not yet elucidated.
Databáze: OpenAIRE