High resolution scanning tunnelling microscopy and extended x-ray-absorption fine structure study of the (5 × 3) silicide structure on Cu(001)
| Autor: | Matthieu Chorro, B. Lalmi, R. Belkhou |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
X-ray absorption spectroscopy
Materials science Absorption spectroscopy Silicon Extended X-ray absorption fine structure Low-energy electron diffraction Analytical chemistry General Physics and Astronomy chemistry.chemical_element law.invention chemistry.chemical_compound chemistry law Microscopy Silicide Scanning tunneling microscope |
| Zdroj: | Journal of Applied Physics. 114:063505 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.4817761 |
| Popis: | Using low energy electron diffraction (LEED), scanning tunnelling microscopy (STM), and x-ray absorption spectroscopy (XAS) techniques, we have studied the first steps of silicon adsorption onto Cu (001) single crystal substrate. For low coverage (∼0.5 ML) and after annealing at 100 °C, STM images and LEED patterns reveal the formation of an ordered quasi commensurate (5×3) superstructure. From a quantitative analysis of XAS data, we extract the Si-Cu distance and detail the local atomic arrangement of the (5×3) structure. |
| Databáze: | OpenAIRE |
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