Electrical profiling of Si(001) p‐n junctions by scanning tunneling microscopy

Autor:	J. M. Halbout, M. B. Johnson, Edward T. Yu
Rok vydání:	1992
Předmět:	Measurement method Physics and Astronomy (miscellaneous) Silicon Analytical chemistry chemistry.chemical_element Molecular physics law.invention chemistry law Charge carrier Scanning tunneling microscope Electronic band structure Spectroscopy p–n junction Image resolution
Zdroj:	Applied Physics Letters. 61:201-203
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.108218
Popis:	Potential distributions across Si(001)p‐n junctions have been studied using cross‐sectional scanning tunneling microscopy, spectroscopy, and potentiometry. A clear transition between p‐ and n‐type material can be seen across each junction, and variations in the energy of the conduction‐band edge can be detected with a spatial resolution of better than 100 A. Current‐voltage characteristics have been measured in both unbiased and electrically biased structures, and measurements under both conditions are consistent with calculated potential distributions.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f6dcb6c7db21044513d3dc950e5e34d3 https://doi.org/10.1063/1.108218 Zobrazit plný text záznamu