On Semiconductor Surface Evaluation Using the Effective Surface Recombination Speed for Schottky‐Coupled Photovoltage Measurements
| Autor: | S. J. Fonash, W. H. Howland |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Surface (mathematics)
Renewable Energy Sustainability and the Environment business.industry Chemistry Surface photovoltage Schottky diode equipment and supplies Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Direct measure Optics Semiconductor parasitic diseases Materials Chemistry Electrochemistry Optoelectronics Figure of merit Effective surface business Recombination |
| Zdroj: | Journal of The Electrochemical Society. 143:1958-1962 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1836932 |
| Popis: | It has been proposed that the concept of effective surface recombination speed S eff can be used with surface photovoltage measurements to evaluate the status of the semiconductor surface. This proposal is examined for Schottky-coupled surface photovoltage measurements, and it is shown that S eff has a complicated dependence on physical surface quantities such as the built-in potential, the actual surface recombination speed, and the space-charge generation and recombination currents. As a result, S eff is not a direct measure of the surface recombination speed for a metal contact to an ideal semiconductor surface, and it is not even a simple figure of merit for damaged semiconductor surfaces. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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