Selective etching mechanism of silicon oxide against silicon by hydrogen fluoride: a density functional theory study
| Autor: | Romel Hidayat, Hye-Lee Kim, Khabib Khumaini, Tanzia Chowdhury, Tirta Rona Mayangsari, Byungchul Cho, Sangjoon Park, Won-Jun Lee |
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| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Physical Chemistry Chemical Physics. 25:3890-3899 |
| ISSN: | 1463-9084 1463-9076 |
| DOI: | 10.1039/d2cp05456f |
| Popis: | The mechanism underlying the selective etching of silicon oxide against silicon by HF vapor was elucidated by DFT calculations that showed lower activation energies for silicon oxide than for silicon. |
| Databáze: | OpenAIRE |
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