Impact of Trapezoidal Channel in Double-Gate Tunnel Field Effect Transistor on Ambipolar Conduction for Ultra Low-Power Application
| Autor: | Debasish Gayen, Ujjwal Dey, Abhishek Ghosh Roy, Wasim Reja, Bijoy Goswami, Subir Kumar Sarkar |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Transistor 02 engineering and technology 021001 nanoscience & nanotechnology Tunnel field-effect transistor 01 natural sciences law.invention law Logic gate 0103 physical sciences Optoelectronics Work function Electric potential 0210 nano-technology business Quantum tunnelling Voltage Communication channel |
| Zdroj: | 2020 17th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). |
| DOI: | 10.1109/ecti-con49241.2020.9158233 |
| Popis: | In this manuscript, a trapezoidal shaped double gate tunnel field-effect transistor(TDG-TFET) has been proposed which foster the characteristics of higher ION /IOF F ratio with improved and better subthreshold swing(SS) than conventional TFET. We have varied different parameters like VDS, channel length, oxide thickness, gate work function to optimize the performance of the proposed device. From the device simulation results, it is found that subthreshold swing(SS) can be reduced to 23mv/decade and ION /IOF F ratio is order of 1014 at a driving voltage of 0.5V thereby establishing its power efficient behaviour. 2D Silvaco Atlas simulation has been executed to validate the performance of the proposed structural design. |
| Databáze: | OpenAIRE |
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