An Oxynitride Gate Dielectric for Sub-30 Å Complementary Metal Oxide Semiconductor Devices Using Precombustion of Nitrous Oxide
Autor: | Steven M. Shank, Wade J. Hodge, William F. Clark |
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Rok vydání: | 2002 |
Předmět: |
Silicon
Renewable Energy Sustainability and the Environment Gate dielectric Analytical chemistry chemistry.chemical_element Dielectric Nitrous oxide Atmospheric temperature range Condensed Matter Physics Nitrogen Surfaces Coatings and Films Electronic Optical and Magnetic Materials Secondary ion mass spectrometry chemistry.chemical_compound chemistry Materials Chemistry Electrochemistry Wafer |
Zdroj: | Journal of The Electrochemical Society. 149:G532 |
ISSN: | 0013-4651 |
Popis: | Physical and device characteristics of sub-30 A oxynitride gate dielectrics with different nitrogen concentrations are compared. These dielectrics are formed in a standard atmospheric furnace that is in series with a gas precombustion chamber. All gases flow through the precombustion chamber prior to reacting with the wafers. The layers are formed by oxidation of silicon in a N 2 O (nitrous oxide) ambient. By changing the precombustion chamber temperature from 850° to 950°C, the nitrogen content is changed by up to a factor of five as measured by electron spectroscopy for chemical analysis and time-of-flight secondary ion mass spectrometry A change in oxidation growth rate across the temperature range is observed with a decrease in growth rate for higher precombustion temperatures. The nitrogen content also modifies the refractive index of the film such that for a 24 A optical thickness, a physical thickness delta of 2 A is observed, with the thickness at 950°C 2 A less than at 850°C. Complementary metal oxide semiconductor devices on silicon-on-insulator substrates formed with hotter precombustion temperatures exhibit a two-time reduction in leakage current density. |
Databáze: | OpenAIRE |
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