An Oxynitride Gate Dielectric for Sub-30 Å Complementary Metal Oxide Semiconductor Devices Using Precombustion of Nitrous Oxide

Autor: Steven M. Shank, Wade J. Hodge, William F. Clark
Rok vydání: 2002
Předmět:
Zdroj: Journal of The Electrochemical Society. 149:G532
ISSN: 0013-4651
Popis: Physical and device characteristics of sub-30 A oxynitride gate dielectrics with different nitrogen concentrations are compared. These dielectrics are formed in a standard atmospheric furnace that is in series with a gas precombustion chamber. All gases flow through the precombustion chamber prior to reacting with the wafers. The layers are formed by oxidation of silicon in a N 2 O (nitrous oxide) ambient. By changing the precombustion chamber temperature from 850° to 950°C, the nitrogen content is changed by up to a factor of five as measured by electron spectroscopy for chemical analysis and time-of-flight secondary ion mass spectrometry A change in oxidation growth rate across the temperature range is observed with a decrease in growth rate for higher precombustion temperatures. The nitrogen content also modifies the refractive index of the film such that for a 24 A optical thickness, a physical thickness delta of 2 A is observed, with the thickness at 950°C 2 A less than at 850°C. Complementary metal oxide semiconductor devices on silicon-on-insulator substrates formed with hotter precombustion temperatures exhibit a two-time reduction in leakage current density.
Databáze: OpenAIRE