Growth Processes of Si(111)-√3×√3-Ag Studied by Scanning Tunneling Microscope

Autor:	Itsuo Katayama, Fumiya Shoji, Yasuyuki Ohba, Hideaki Ohnishi, Kenjiro Oura
Rok vydání:	1993
Předmět:	Silicon Chemistry Annealing (metallurgy) General Engineering Nucleation General Physics and Astronomy chemistry.chemical_element Crystal growth Vacuum evaporation law.invention Crystallography Transition metal law Step edges Scanning tunneling microscope
Zdroj:	Japanese Journal of Applied Physics. 32:2920
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.32.2920
Popis:	Domain growth processes of Si(111)√3×√3-R30°-Ag surfaces and their dependence upon deposition conditions have been investigated by means of scanning tunneling microscope. When Ag is deposited at room temperature, small islands are formed on the terraces. After annealing at 350°C, these small islands change into √3-Ag domains on the terraces without diffusion of Ag atoms to the step edges. On the other hand, when Ag is deposited on a hot substrate of about 350°C, the √3-Ag domains nucleate at the step edges and few √3-Ag domains are observed on the terraces. Moreover, two kinds of √3-Ag domains are found in either case: one domain is geometrically higher than the other domain.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f6b7475dc9dec7b2e27f7d9054f9aaa2 https://doi.org/10.1143/jjap.32.2920 Zobrazit plný text záznamu