Air stable C60 based n-type organic field effect transistor using a perfluoropolymer insulator
| Autor: | Jang-Joo Kim, Ji Whan Kim, Junhyuk Jang, Noh-Hwal Park |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Organic electronics
Materials science Organic field-effect transistor business.industry Transistor Gate dielectric Nanotechnology General Chemistry Dielectric Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Biomaterials law Gate oxide Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Extrinsic semiconductor |
| Zdroj: | Organic Electronics. 9:481-486 |
| ISSN: | 1566-1199 |
| DOI: | 10.1016/j.orgel.2008.02.011 |
| Popis: | Air stable n-type organic field effect transistors (OFETs) based on C 60 are realized using a perfluoropolymer as the gate dielectric layer. The devices showed the field-effect mobility of 0.049 cm 2 /V s in ambient air. Replacing the gate dielectric material by SiO 2 resulted in no transistor action in ambient air. Perfluorinated gate dielectric layer reduces interface traps significantly for the n-type semiconductor even in air. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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