FEGTEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD

Autor:	A G Cullis, C. J. D. Hetherington, A. Benedetti, D. J. Robbins, D. J. Wallis, D J Norris
Rok vydání:	2018
Předmět:	chemistry.chemical_compound Materials science Scale (ratio) chemistry Germane Flux Engineering physics
Zdroj:	Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636 Microscopy of Semiconducting Materials 2003
DOI:	10.1201/9781351074636-35
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f6afa16d53069591a7d50e32277e8818 https://doi.org/10.1201/9781351074636-35 Zobrazit plný text záznamu