Effect of Titanium Addition on the Elemental Partitioning Behavior of Silicon in Ni-19 At. Pct Al-xSi-yTi Alloys
Autor: | Yao-Jen Chang, An-Chou Yeh, Li-Yin Kuo |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science Electron probe microanalysis Silicon Metallurgy Metals and Alloys chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Crystallographic defect chemistry Mechanics of Materials 0103 physical sciences Volume fraction Metallic materials Partition (number theory) 0210 nano-technology CALPHAD Titanium |
Zdroj: | Metallurgical and Materials Transactions A. 48:3920-3926 |
ISSN: | 1543-1940 1073-5623 |
DOI: | 10.1007/s11661-017-4155-1 |
Popis: | We have investigated the effect of Ti addition on the partitioning behavior of Si in Ni-19 at. pct Al-xSi-yTi alloys (x = 1.0 to 2.5 at. pct and y = 0.0 to 2.0 at. pct). The elemental partition ratios between the γ and γ′ phases were determined by electron probe microanalysis. The results indicate that an increase in the Ti content increases the partitioning tendency of Si in the γ matrix. However, Si was preferentially partitioned in the γ′ phase after 816 hours aging at 1373 K (1100 °C). Interestingly, a CALPHAD-based simulation also predicted the tendency of Si to partition in the γ phase with increasing Ti content. However, Si was predicted to preferentially partition in the γ matrix. First-principles calculations suggest that Ti atoms can replace Si atoms in the γ′ phase and reject Si atoms into the face-centered cubic γ matrix. Furthermore, the partitioning behavior of Si could also be influenced by the presence of point defects and the volume fraction of the γ′ phase. |
Databáze: | OpenAIRE |
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