Autor: |
B. Krist, S. Suri, Sridhar Balakrishnan, Hui Jae Yoo, J. Bielefeld, Sean W. King, V. RamachandraRao, H. Hiramatsu, C. Ward, Kanwal Jit Singh, M. Harmes, Mauro J. Kobrinsky, P. Reese |
Rok vydání: |
2010 |
Předmět: |
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Zdroj: |
2010 IEEE International Interconnect Technology Conference. |
DOI: |
10.1109/iitc.2010.5510708 |
Popis: |
Capacitance coupling in copper low-k interconnects can be further reduced by implementing Air gaps in the intra-layer dielectric. This paper describes the evaluation of an integrated Air gap technology using 32 and 22 nm node technology vehicles. Electrical, reliability, and yield results are presented. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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