On the Structural Perfection of Large-Diameter Silicon Carbide Ingots
| Autor: | M. P. Shcheglov, A. O. Lebedev, Yu. O. Bykov |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science General Chemical Engineering Metallurgy Metals and Alloys 02 engineering and technology Crystal structure 021001 nanoscience & nanotechnology 01 natural sciences Carbide Inorganic Chemistry Lely method chemistry.chemical_compound Key factors chemistry 0103 physical sciences Materials Chemistry Silicon carbide Substructure Ingot 0210 nano-technology Large diameter |
| Zdroj: | Inorganic Materials. 56:928-933 |
| ISSN: | 1608-3172 0020-1685 |
| Popis: | 4H-silicon carbide ingots with high structural perfection have been grown by the modified Lely method (LETI method) on 100-mm-diameter seeds. Using our experimental data and theoretical analysis, we have systematized the key factors responsible for the degradation of the crystal structure of the ingots during the growth process. The formation of parasitic polytype inclusions in the early stages of growth has been shown to lead to the formation of antiphase boundaries and a mosaic substructure in the ingot. |
| Databáze: | OpenAIRE |
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