High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique
| Autor: | Sheng-Hsien Liu, Yu-Hsien Lin, Wen Luh Yang, Chi-Chang Wu, Tien-Sheng Chao |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Fabrication Silicon business.industry chemistry.chemical_element Electronic Optical and Magnetic Materials Metal Non-volatile memory chemistry.chemical_compound Nickel Nanolithography Silicon nitride chemistry Nanocrystal visual_art Electronic engineering visual_art.visual_art_medium Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 60:3393-3399 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2013.2279156 |
| Popis: | A novel ion bombardment (IB) technique is presented to fabricate and embed double-layer (DL) Ni nanocrystal (NC) in silicon nitride for TaN/Al2O3/Si3N4/SiO2/Si nonvolatile memory applications. In contrast to other methods of forming DL metal NC, the IB technique is a relatively simple fabrication method and completely compatible with the current IC manufacturing technologies. Using the IB technique, a high-quality ultrathin interlayer between top and bottom layered NCs can be easily formed and controlled. Compared with the control sample, the IB-induced DL Ni NC memory exhibits superior performance in terms of faster program and erase (P/E) speeds, longer data retention, better endurance, negligible program disturbance, and great potential for a multilevel operation. In addition, the IB-induced DL Ni NC device also shows higher P/E efficiency as well as similar excellent reliability by comparison with other conventional DL metal NC memories due to the high-quality ultrathin interlayer. |
| Databáze: | OpenAIRE |
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