All-inversion region gm/ID methodology for RF circuits in FinFET technologies
| Autor: | Juan Núñez, Rafaella Fiorelli, Fernando Silveira |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Computer science Transistor Design flow 020206 networking & telecommunications Inversion (meteorology) Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology Inductor 01 natural sciences Capacitance law.invention law 0103 physical sciences Phase noise Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Radio frequency Electronic circuit |
| Zdroj: | NEWCAS |
| DOI: | 10.1109/newcas.2018.8585627 |
| Popis: | In the context of IoT applications, together with the use of deep-submicron technologies as FinFET, this paper presents a revision of the gm/ID methodology for radio-frequency analog front-end circuits. Particularly, this methodology is applied for the design of LC-VCOs in the 5.8-GHz band using 20-nm FinFET transistors. To incorporate the FinFET model into the design flow, a semi-empirical model is extracted from electrical simulations. To show the good performance of the methodology, an LC-VCO design, picked from the calculated design maps, is electrically simulated, achieving good match regarding oscillation frequency and phase noise. |
| Databáze: | OpenAIRE |
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