Formation of nickel oxide thin film and analysis of its electrical properties

Autor:	Seon-Gil Lee, Yong-Joon Park, Eung-Ahn Lee, Sang-Soo Noh, Jeong-Hwan Seo
Rok vydání:	2005
Předmět:	Materials science genetic structures Annealing (metallurgy) Nickel oxide Metallurgy Analytical chemistry Sputter deposition Atmospheric temperature range Ni oxide eye diseases Electrical resistivity and conductivity sense organs Thin film Temperature coefficient
Zdroj:	Journal of Sensor Science and Technology. 14:52-55
ISSN:	1225-5475
DOI:	10.5369/jsst.2005.14.1.052
Popis:	Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of to according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/ to 5,630 ppm/ in the temperature range of . Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.
Databáze:	OpenAIRE
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