| Autor: |
Mastro, M. A., Hite, J. K., Eddy, C. R., Tadjer, M. J., Pearton, S. J., Ren, F., Kim, J. |
| Rok vydání: |
2020 |
| Předmět: |
|
| DOI: |
10.48550/arxiv.2009.01117 |
| Popis: |
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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