Investigation and optimization of AlN nucleation layers grown on 4H-SiC by MOCVD
| Autor: | Renu Tyagi, Rajesh K. Bag, R.A. Khan, Ufana Riaz, M. V. G. Padmavati, Kapil Narang |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Diffraction Morphology (linguistics) Materials science Relaxation (NMR) Analytical chemistry Nucleation 02 engineering and technology Surface finish Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Root mean square 0103 physical sciences Metalorganic vapour phase epitaxy 0210 nano-technology |
| Zdroj: | Materials Today: Proceedings. 36:637-641 |
| ISSN: | 2214-7853 |
| Popis: | The AlN Nucleation layers (NLs) with different thickness under very high V/III ratio (∼5000) growth conditions were grown on 4H-SiC by metal organic chemical vapor deposition (MOCD). The thickness of the NLs were varied between 10 and 300 nm. Growth mechanism was investigated by atomic force microscopy and high-resolution X-ray diffraction measurements. The crystalline, surface qualities and relaxation of the AlN were found to closely depend on the thickness of the AlN epi-layers. AlN NL with 100 nm thickness were found to have lower RMS (root mean square) roughness of ∼ 0.5 nm with smoother surface morphology and improved interface and crystalline quality. It was also observed that relaxation changed from 30 to 65 percent when the thickness was changed from 40 to 300 nm, respectively. |
| Databáze: | OpenAIRE |
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