Nitrogen depth profiling in thin oxynitride layers on silicon

Autor:	M. Sokolovsky, A. Gladkikh, E. Kaganer, A. Budrevich
Rok vydání:	2006
Předmět:	Materials science Silicon Ion yield Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Condensed Matter Physics Nitrogen Surfaces Coatings and Films Low energy chemistry Sputtering Materials Chemistry Nanometre
Zdroj:	Surface and Interface Analysis. 38:267-271
ISSN:	1096-9918 0142-2421
Popis:	This paper describes the results of nitrogen depth profiling in nanometer oxynitride layers on silicon, employing dynamic SIMS and time-of-flight SIMS. The surface transient effect was studied using surface encapsulation method, and the attractive possibility of time-of-flight SIMS profiling with low energy Cs sputtering was demonstrated. Quantification of the nitrogen profiles was performed after a detailed study of the matrix effect in order to correct for the ion yield difference at the oxynitride/silicon interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f6864078a5ecb1b68f6cdb65a5587d9f https://doi.org/10.1002/sia.2303 Zobrazit plný text záznamu Plný text