| Autor: | G. I. Isakov |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Electron mobility
Materials science Condensed matter physics Condensed Matter::Other business.industry General Chemical Engineering Doping Metals and Alloys Electronic structure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Microstructure Inorganic Chemistry Condensed Matter::Materials Science Semiconductor Hall effect Phase (matter) Materials Chemistry business Eutectic system |
| Zdroj: | Inorganic Materials. 39:568-575 |
| ISSN: | 0020-1685 |
| DOI: | 10.1023/a:1024088817440 |
| Popis: | Experimental evidence is presented that semiconductor–metal eutectics with a low content of the metallic phase (4 vol %) are similar in electronic structure to inhomogeneous semiconductors. The microstructure of undoped and Te-doped GaSb–V2Ga5 and GaSb–GaV3Sb5 eutectic alloys is examined, and the Hall mobility of carriers in these alloys is determined. The anomalous temperature variation of Hall mobility in GaSb–V2Ga5 (μ ∼ T 2) and GaSb–GaV3Sb5 (μ ∼ T 5) is interpreted in terms of infinite clusters ofn-type metallic inclusions embedded in a p-type semiconductor matrix and interconnected through overlapping inhomogeneous interfaces. It seems likely that the difference in conductivity type between the semiconductor matrix and the infinite clusters gives rise to a random large-scale potential relief. Te compensation of GaSb in the eutectic alloys causes the Hall mobility to vary more rapidly with temperature, μ ∼T 3 to T10 , which is interpreted as due to an increase in the amplitude of the random large-scale potential relief, the formation of infinite clusters, and partial compensation of unintentional acceptor doping in the semiconductor matrix. |
| Databáze: | OpenAIRE |
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