Improving GaN-based HEMTs Performance by Gate Recess Technique

Autor:	Wei-Yu Lee, Chen-Che Lee, Wei-Ching Chuang, Hsin Jung Lee, Hsin-Che Lee
Rok vydání:	2020
Předmět:	Electron mobility Materials science business.industry Transistor Wide-bandgap semiconductor Gallium nitride High-electron-mobility transistor Threshold voltage law.invention chemistry.chemical_compound chemistry law Etching Logic gate Optoelectronics business
Zdroj:	2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE).
Popis:	GaN-based electron mobility transistors (HEMTs) have been widely used in high-frequency or high-power device application. However, GaN-based HEMT is usually normally-on mode due to the high-density two-dimensional electron gas (2DEG) caused by its strong polarization effect, which has poor fail-safe operation and more difficult gate control. In this paper, we use gate recess technology combined with ICP-RIE to control the depth of gate penetration to achieve the purpose of controlling the threshold voltage. Measurements show that the threshold voltage (V TH ) exhibits a positive shift of +1.9 V with the gate penetration.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f672d94588b62dcf3aa16a0a3567e556 https://doi.org/10.1109/ecice50847.2020.9301926 Zobrazit plný text záznamu