Growth and Transport Studies in M/I/$p$-SC Magnetic Tunnel Diodes Containing Different Tunnel Barrier Materials
| Autor: | Hidekazu Saito, Shinji Yuasa, K. C. Agarwal, K. Ando |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Materials science
Magnetoresistance Condensed matter physics business.industry Magnetic semiconductor Electronic Optical and Magnetic Materials Gallium arsenide Tunnel magnetoresistance chemistry.chemical_compound Semiconductor Ferromagnetism chemistry Electrical and Electronic Engineering business Quantum tunnelling Diode |
| Zdroj: | IEEE Transactions on Magnetics. 43:2809-2811 |
| ISSN: | 0018-9464 |
| DOI: | 10.1109/tmag.2007.894015 |
| Popis: | Metal-insulator-semiconductor (MIS) magnetic tunnel diodes consisting of ferromagnetic metal (Fe) and semiconductor (Ga1-xMnxAs) electrodes with various tunnel barrier materials (AlAs, GaAs, ZnTe, and MgO) were fabricated. A clear tunneling magnetoresistance (TMR) effect was observed in all the samples. Magnetoresistance ratios at 2 K were observed to be 38% for AlAs, 11% for GaAs, 8% for ZnTe, and ~1% for MgO. Growth and transport studies strongly suggested that the small lattice mismatch between the barrier and the electrode materials and Mn-free interfaces are important for have significant influence on developing high-quality MIS magnetic tunnel diodes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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