Determining 4H silicon carbide electronic properties through combined use of device simulation and metal–semiconductor field-effect-transistor terminal characteristics

Autor:	Neil Goldsman, Mingwei Huang, J.M. McGarrity, Isaak D. Mayergoyz, Dwight L. Woolard, Chien-Hwa Chang
Rok vydání:	1998
Předmět:	Electron mobility Materials science business.industry Schottky barrier Wide-bandgap semiconductor General Physics and Astronomy chemistry.chemical_compound Impact ionization chemistry Silicon carbide Optoelectronics Breakdown voltage MESFET Field-effect transistor business
Zdroj:	Journal of Applied Physics. 84:2065-2070
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.368267
Popis:	A two-dimensional numerical device simulator has been developed specially for the recessed gate 4H silicon carbide(4H-SiC) metal–semiconductor field-effect-transistor (MESFET). By combining numerical techniques, material physics, and measured device characteristics, we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field curves, and the Schottky barrier height. We have also enabled and used the new simulator to investigate breakdown voltage and thus predict operation limitations of the 4H-SiC device. Simulations indicate that impact ionization is relatively small in 4H-SiC, thereby leading to a very high breakdown voltage of 125 V in a 0.7 μm gate MESFET.
Databáze:	OpenAIRE
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