| Autor: |
Binh Tinh Tran, Chia-Hua Chang, Fu-Ching Tung, Man-Chi Huang, Yueh-Chin Lin, S. S. Tang, Edward Yi-Chang, Muh-Wang Liang, Kung-Liang Lin, Fang-Ming Li, Ching Hsiang Hsu |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 37th IEEE Photovoltaic Specialists Conference. |
| DOI: |
10.1109/pvsc.2011.6186575 |
| Popis: |
In this report, we studied the fabrication of heterojunction with intrinsic thin layer (HIT) solar cell, which was deposited by using very high frequency chemical vapor deposition (VHF-PECVD), at a high deposition rate under a low process temperature. The HIT solar cell has a very thin emitter layer on the light-incident surface (about 10nm) and the contact region was passivated by hydrogen (H2) plasma treatment to improve solar cell performance. With the passivation, the carrier transport may be enhanced and the extraction of photo current may also be increased. These features can make the Si-bulk absorbs more photons and extract more photo-electric current [1]. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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