Ambipolar Photoresponsivity in an Ultrasensitive Photodetector Based on a WSe2/InSe Heterostructure by a Photogating Effect

Autor:	Wenhua Shi, Haixin Ma, Huayao Tu, Weiming Lv, Qilitai Wang, Zhongyuan Liu, Jiachen Wang, Ting Lei, Rui Hu, Bin Fang, Zhongming Zeng, Like Zhang
Rok vydání:	2021
Předmět:	Materials science Ambipolar diffusion business.industry Photodetector Optoelectronics General Materials Science Quantum efficiency Heterojunction Photodetection Specific detectivity business Rapid response
Zdroj:	ACS Applied Materials & Interfaces. 13:50213-50219
ISSN:	1944-8252 1944-8244
Popis:	Ambipolar photoresponsivity mainly originates from intrinsic or interfacial defects. However, these defects are difficult to control and will prolong the response speed of the photodetector. Here, we demonstrate tunable ambipolar photoresponsivity in a photodetector built from vertical p-WSe2/n-InSe heterostructures with photogating effect, exhibiting ultrahigh photoresponsivity from -1.76 × 104 to 5.48 × 104 A/W. Moreover, the photodetector possesses broadband photodetection (365-965 nm), an ultrahigh specific detectivity (D*) of 5.8 × 1013 Jones, an external quantum efficiency of 1.86 × 107%, and a rapid response time of 20.8 ms. The WSe2/InSe vertical architecture has promising potential in developing high-performance nano-optoelectronics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f666bfc06cf70f7a1f0af377d1b29e21 https://doi.org/10.1021/acsami.1c12330 Zobrazit plný text záznamu