Role of the Surface Steps on the Growth of CrSi2 on {111} Silicon

Autor: M. J. David, M. Caumont, André Rocher, A. Oustry
Rok vydání: 1995
Předmět:
Zdroj: MRS Proceedings. 402
ISSN: 1946-4274
0272-9172
DOI: 10.1557/proc-402-535
Popis: CrSi2 layers grown by solid phase epitaxy on a nominal (111) Si surface exhibit in the same proportion two different orientation relationships, named A and B. When CrSi2 is deposited on a 8° vicinal (111) Si surface, B-type orientation is favoured with respect to the A type. This result can be explained by the fact that both the step width introduced by the miscut and the planar coincidence between {1100}Crsi2 and {111}Si are nearly equal to 23Å. Edge type misfit dislocations are observed at the interface with the same spacing. Their Burgers vector component along [111] is almost compensated by the atomic steps along the directions. The role of the steps is discussed in term of elastic energy. Steps introduce misfit dislocations which make possible coherent growth of the B type orientation.
Databáze: OpenAIRE
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