An observation of charge trapping phenomena in GaN/AlGaN/Gd2O3/Ni–Au structure

Autor:	Ray-Ming Lin, L. B. Chang, Shu Tsun Chou, Ming-Jer Jeng, Atanu Das, Siddheswar Maikap
Rok vydání:	2011
Předmět:	Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Annealing (metallurgy) Wide-bandgap semiconductor Electron trapping chemistry.chemical_element Trapping law.invention Ambient air Nickel chemistry law Gan algan Crystallization
Zdroj:	Applied Physics Letters. 98:222106
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.3596382
Popis:	Charge trapping, especially electron trapping phenomena in GaN/AlGaN/Gd2O3/Ni–Au metal-oxide-semiconductor structure have been investigated. Owing to crystallization of Gd2O3 film after annealing at 900 °C in ambient air for 30 s, a significant memory window of 1.6 V is observed under 5 V@100 ms programming pulse compared with that of as-deposited sample. The fabricated structure exhibits no erase phenomena under large negative bias of −20 V. Only time dependent natural charge loss is occurred. Even so, 0.9 V of memory window is still remained after 21 h of retention. Good endurance of 103 cycles with 2.0 V memory window is also obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f659c0a3888cc2fb16aa7e19d0c54ed6 https://doi.org/10.1063/1.3596382 Zobrazit plný text záznamu