Multiplication Noise Characterization of InAlAs-APD With Heterojunction
| Autor: | Kenichi Kasahara, Jun Ishihara, T. Nakata, Kikuo Makita |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Physics
Noise measurement APDS Physics::Instrumentation and Detectors business.industry Heterojunction Avalanche photodiode Noise (electronics) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Optics Signal-to-noise ratio law Ionization Multiplication Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 21:1852-1854 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2009.2032783 |
| Popis: | The excess noise and ionization coefficient ratio of InAlAs avalanche photodiodes (APDs) with heterojunctions has been measured. To obtain these values accurately, we used a differential amplifier and determined the optical current at which the avalanche multiplication equals 1. These made it possible to conduct measurements on excess noise including that in the low multiplication region. Measured ionization coefficient ratios at M=10 were 0.18 and 0.17 with multiplication layer widths of 0.2 and 0.7 ?m , respectively. Excess noise was reduced with an increase in the optical input power. This tendency appeared more prominently in APDs with a thin multiplication layer. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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