Growth of ultra-thin AlN(0001) films on NiAl(111)
| Autor: | J. Boysen, P. Gaßmann, R. Franchy, G. Schmitz, F. Bartolucci |
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| Rok vydání: | 1996 |
| Předmět: |
Nial
Auger electron spectroscopy Materials science Low-energy electron diffraction Band gap Analytical chemistry High resolution electron energy loss spectroscopy Crystal growth General Chemistry Dielectric Condensed Matter Physics Materials Chemistry Thin film computer computer.programming_language |
| Zdroj: | Solid State Communications. 97:1-5 |
| ISSN: | 0038-1098 |
| DOI: | 10.1016/0038-1098(95)00600-1 |
| Popis: | The growth of ultra-thin AlN films on NiAl(111) has been studied by means of high resolution electron energy loss spectroscopy (HREELS), low energy electron diffraction (LEED) and Auger electron spectroscopy (AES). The AlN films were grown upon adsorption and thermal decomposition of NH 3 on NiAl(111). HREEL spectra of the ordered AlN film show a Fuchs-Kliewer phonon mode at 860 cm −1 . This is in good agreement with theoretical spectra calculated on the base of the dielectric theory. The electronic energy gap of the thin AlN films is determined to be E g ≅ 6.0 ± 0.2 eV. In addition, interface gap states at 1.1 and 5.1 eV were found. The well-ordered AlN film renders a distinct LEED pattern, which exhibits hexagonal symmetry. The film grows in AlN[0001]∥NiAl[111] direction. |
| Databáze: | OpenAIRE |
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