Acidic Wet Chemical Etching of Silicon Surfaces – From Mechanistic Concepts to Process Optimization

Autor:	Lippold, M., Gondek, C., Kroke, E.
Jazyk:	angličtina
Rok vydání:	2012
Předmět:	Wafer-Based Silicon Solar Cells and Materials Technology Silicon Solar Cell Improvements
DOI:	10.4229/27theupvsec2012-2cv.6.31
Popis:	27th European Photovoltaic Solar Energy Conference and Exhibition; 1877-1880 The influence of the addition of sulfuric acid to the frequently-used HF-HNO3-H2O etching mixtures has been studied. Nitrogen-oxygen cations, which are supposed to be crucial in the silicon oxidation process, are stabilized by sulfuric acid. Raman spectroscopy is suitable for determination of intermediates and for the quantification of bath components. The formation of nitrogen oxides during silicon etching was investigated in terms of mixture composition. Etching multicrystalline silicon wafers in H2SO4-rich mixtures produces promising surface textures. Etched wafer surfaces were investigated by means of laser scanning (LSM) and scanning electron microscopy (SEM). Reflection measurements were performed to evaluate the novel surface textures.
Databáze:	OpenAIRE
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