High-mobility p-type LixCuyO films prepared by plasma-enhanced atomic layer deposition and low-temperature annealing

Autor:	Shui-Yang Lien, Ming-Jie Zhao, Chun-Hui Bao, Wan-Yu Wu, Chia-Hsun Hsu, Wen-Zhang Zhu
Rok vydání:	2022
Předmět:	Diffraction Electron mobility Materials science Annealing (metallurgy) Band gap Mechanical Engineering Analytical chemistry Plasma Condensed Matter Physics Metal Atomic layer deposition Mechanics of Materials visual_art Transmittance visual_art.visual_art_medium General Materials Science
Zdroj:	Materials Letters. 308:131251
ISSN:	0167-577X
DOI:	10.1016/j.matlet.2021.131251
Popis:	High-mobility, p-type LixCuyO films are prepared by co-dosed plasma-enhanced atomic layer deposition. The x-ray diffraction patterns show that in addition to the CuO and Cu2O phases, the formed LiCu3O3 is responsible for the high mobility. The 350°C-annealed LixCuyO film has transmittance of 85% at mid-long wavelengths and bandgap of 2.4 eV. A hole mobility of 88 cm2V-1s-1 is reached, significantly higher than that of common p-type metal oxides.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f62e63fd2247825b54962fc5ee69b6a9 https://doi.org/10.1016/j.matlet.2021.131251 Zobrazit plný text záznamu Full Text from ScienceDirect