| Autor: |
Hirokazu Aizawa, Gyana Pattanaik, Kai-Hung Yu, Kaoru Maekawa, Gert J. Leusink |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
2020 IEEE International Interconnect Technology Conference (IITC). |
| DOI: |
10.1109/iitc47697.2020.9515666 |
| Popis: |
Ru capping process was demonstrated on 48nm-pitch Cu damascene interconnect with area selective deposition technique of Ru CVD. Ru nucleation and film continuity were optimized by process including wet cleaning and dry surface treatments. Physical analysis and line leakage electrical test were conducted to evaluate Ru capping layer for different process conditions. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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