MOSFET performance and scalability enhancement by insertion of oxygen layers

Autor:	A. Yiptong, Tiehui Liu, Nyles W. Cody, Hideki Takeuchi, X. Huang, Nuo Xu, Nattapol Damrongplasit, Robert J. Mears, Robert John Stephenson, Marek Hytha
Rok vydání:	2012
Předmět:	Materials science Silicon business.industry Electrostatic integrity chemistry.chemical_element Oxygen chemistry Scalability MOSFET Electronic engineering Optoelectronics Node (circuits) business Communication channel
Zdroj:	2012 International Electron Devices Meeting.
DOI:	10.1109/iedm.2012.6478990
Popis:	A detailed simulation and experimental study of MOSFET mobility enhancement and electrostatic integrity improvement achieved by the insertion of oxygen layers within the Si channel region is presented. The applicability of this technology to thin-body MOSFET structures is discussed. Projections indicate that it will be more effective than strain for boosting performance at the 14 nm node.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f6226e04ad5c1abb672392ead4ac63a2 https://doi.org/10.1109/iedm.2012.6478990 Zobrazit plný text záznamu