On the short-range order of the SiOx (0≤x≤2) surface
| Autor: | P.V. Melnik, I.P. Koval, M. Nakhodkin, S.N. Goysa, O. Bondarchuk |
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| Rok vydání: | 2009 |
| Předmět: |
Surface (mathematics)
Elastic scattering Chemistry Analytical chemistry General Physics and Astronomy Surfaces and Interfaces General Chemistry Condensed Matter Physics Surfaces Coatings and Films symbols.namesake Fourier transform Ion implantation symbols Wafer Atomic physics Silicon oxide Electron scattering Stoichiometry |
| Zdroj: | Applied Surface Science. 255:6421-6425 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2009.02.031 |
| Popis: | Fine (oscillating) structure (FS) in the elastically scattered electron spectra (ESES) [O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Sci. 258 (1991) 239; O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Rev. Lett. 4 (1997) 965] was used to investigate surface structure of the SiO x (0 ≤ x ≤ 2). SiO x surface with different stoichiometry was prepared by implantation of 500 eV oxygen ions into a silicon wafer. Fourier transformation of the FS ESES contains one peak at 2.32 A for Si, two peaks at 1.62 A and 2.65 A for a-SiO 2 and three peaks centered at 1.6–1.7 A, 2.1–2.2 A and 2.65–3.04 A for SiO x . Peaks at 1.62 A and 2.65 A are assigned to Si–O and O–O nearest distances correspondently. Ratio of the area under the peak at 2.65 A to the area under the peak at 1.62 A turned out to be not constant but grows linearly with the composition parameter x . The latter is considered to prove validity of the Random Bond Model to describe short-range order on the surface of non-stoichiometric silicon oxide. |
| Databáze: | OpenAIRE |
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