Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate
| Autor: | H. Sugiura, Naoto Yoshimoto, Tsuyoshi Ito, K. Magari |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Optical amplifier
Materials science Fabrication Extinction ratio business.industry Amplifier Ranging Polarization (waves) Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound Optics chemistry Wavelength-division multiplexing Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 10:657-659 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.669233 |
| Popis: | A high-performance tensile-strained InGaAs multi-quantum-well semiconductor optical amplifier (MQW-SOA) gate developed for wavelength-division-multiplexing (WDM) applications is reported. The -0.47% InGaAs-strained SOA gate has a very low polarization dependence of 0.3 dB over a driving current between 30 and 60 mA and a wide-input signal wavelength range from 1530 to 1580 nm. The fabrication tolerance of the mesa stripe width is very large, ranging from 1.0 to 1.75 /spl mu/m. The MQW-SOA gate has an extinction ratio of more than 40 dB. The fiber-to-fiber lossless operation current is less than 50 mA over the fiber-amplifier gain band. The gating speed is less than 1 ns. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|