A very-low RF noise and high-performance (4.8 fJ) bipolar device in a 0.35 μm high-density BiCMOS SRAM technology

Autor:	N. Camilleri, F.B. Shapiro, J.-H. Lin, R.C. Taft, D.E. Bockelman
Rok vydání:	2002
Předmět:	Frequency divider Materials science Rf noise business.industry Bipolar junction transistor Electrical engineering High density Static random-access memory BiCMOS Emitter-coupled logic Noise figure business
Zdroj:	Proceedings of 1994 VLSI Technology Symposium.
Popis:	This paper presented the bipolar RF and circuit characterization of a high-performance 0.35 /spl mu/m BICMOS technology specifically designed for fast SRAMs. A 900 MHz noise figure as low as 0.54 dB at 0.5 mA, prescaler operation up to 3.3 GHz for a switch current of 200 pA, and unstacked CML operation down to 1.0 V yielding a 4.8 fJ power-delay product were reported. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f61a9af84f04e6b752fae3ed6701de73 https://doi.org/10.1109/vlsit.1994.324407 Zobrazit plný text záznamu