Investigation of sub-10nm cylindrical surrounding gate germanium nanowire field effect transistor with different cross-section areas
| Autor: | Amir Hossein Bayani, Daryoosh Dideban, J. Voves, Negin Moezi |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics Transconductance Transistor Nanowire chemistry.chemical_element Germanium Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Tight binding chemistry law 0103 physical sciences Density of states Figure of merit General Materials Science Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology |
| Zdroj: | Superlattices and Microstructures. 105:110-116 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2017.03.020 |
| Popis: | In this paper, germanium nanowires (GeNWs) with different cross-sectional areas are considered as the channel of a cylindrical surrounding gate field effect transistors (CSG-FETs) and the electronic properties of them are calculated through the density functional method and Slater-Koster (SK) tight binding model. The corresponding transistor parameters are obtained using Non-equilibrium Green’s function (NEGF) combined by SK model. We find that SK model predicts the well-nigh same bandgap value compared to meta-GGA-DFT approximation, while GGA-DFT underestimates the value of the bandgap. CSG-GeNW-FETs Transistor figure of merit shows a supreme I on /I off ratio which is equal to 10 12 for one of the considered structures with a circular cross-section. The obtained sub-threshold swing (SS) values for the FETs illustrate an increment trend when the supercell size of the germanium nanowire increases whereas the transconductance and ON-current of the FETs decrease when the GeNW supercell size scales down due to the declining of the density of states and electron transmission spectrum. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect