Extended homogeneous nanoripple formation during interaction of high-intensity few-cycle pulses with a moving silicon wafer
| Autor: | W. A. Okell, F. Frank, Dangyuan Lei, C. Hutchison, Stefan A. Maier, Rashid A. Ganeev, Jonathan P. Marangos, John W. G. Tisch, Tobias Witting, Tyler Roschuk |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Laser ablation Silicon business.industry High intensity chemistry.chemical_element 02 engineering and technology General Chemistry STRIPS 021001 nanoscience & nanotechnology 01 natural sciences Sample (graphics) law.invention 010309 optics Optics chemistry Homogeneous law Laser intensity 0103 physical sciences General Materials Science Wafer 0210 nano-technology business |
| Zdroj: | Applied Physics A. 112:457-462 |
| ISSN: | 1432-0630 0947-8396 |
| Popis: | We report the study of extended nanoripple structures formed during the interaction of high-intensity 3.5 fs pulses with a moving silicon wafer. The optimization of laser intensity (8×1013 W cm−2) and sample moving velocity (1 mm s−1) allowed the formation of long strips (∼5 mm) of homogeneous nanoripples along the whole area of laser ablation. The comparison of nanoripples produced on the silicon surfaces by few- and multi-cycle pulses is presented. We find that few-cycle pulses produce sharp and more homogenous structures than multi-cycle pulses. |
| Databáze: | OpenAIRE |
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