GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation

Autor:	Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Yi Chang, Kuniyuki Kakushima
Rok vydání:	2022
Předmět:	Physics and Astronomy (miscellaneous) General Engineering General Physics and Astronomy
Zdroj:	Japanese Journal of Applied Physics. 61:SH1007
ISSN:	1347-4065 0021-4922
DOI:	10.35848/1347-4065/ac5d13
Popis:	A threshold voltage (V th) shifting method for GaN high electron mobility transistors using self-upward polarized Al1-x Sc x N gate dielectrics was proposed. The direction of the spontaneous polarization was controlled by the insertion of an Al2O3 layer between the Al1-x Sc x N and the AlGaN layers. A V th shift of 8 V was found by changing the direction of the polarization. The thickness scaling in the Al1-x Sc x N layer from 40 to 30 nm showed a linear relationship to the V th, revealing to retain a high spontaneous polarization. A high positive V th for enhancement-mode (E-mode) operation is feasible with the method in combination with a recess process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f5f6a590ebef5c2557336b3b69490c59 https://doi.org/10.35848/1347-4065/ac5d13 Zobrazit plný text záznamu