Self assembling growth of triangular pyramidal ge islands on a Si(111)–×–R30°–B surface phase
| Autor: | T Stimpel, Joerg Schulze, Ignaz Eisele, H Baumgärtner |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Superlattice
Dangling bond General Physics and Astronomy chemistry.chemical_element Germanium Surfaces and Interfaces General Chemistry Substrate (electronics) Condensed Matter Physics Epitaxy Surfaces Coatings and Films law.invention Crystallography chemistry law Scanning tunneling microscope Thin film Molecular beam epitaxy |
| Zdroj: | Applied Surface Science. :332-339 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(00)00212-9 |
| Popis: | Due to the crystallographic identity of Si and Ge, a very interesting system for the preparation of quantum dot arrays is a Ge deposition on top of a cleaned Si surface. The critical thickness for relaxation of the Ge layer on Si amounts to We will show that the Si(111)– 3 × 3 –R30°–B surface phase (BSP), a two-dimensional superlattice of B atoms on top a of Si(111) substrate deposited between Si and Ge, has the potential to overcome this problem by completely passivating the Si dangling bonds and, therefore, acting as a lubricant between the Si substrate and the epitaxially grown Ge atoms. In general, we will discuss a step-by-step growth model for Ge epitaxy on BSPs, depending on B concentration, degree of misalignment of the Si surface, and growth temperature using atomic force microscopy (AFM) and scanning tunneling microscopy (STM) studies of samples prepared by molecular beam epitaxy (MBE). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect