Coulomb charging effect of holes in Ge quantum dots studied by deep level transient spectroscopy
| Autor: | Sheng-kun Zhang, Zuimin Jiang, Fang Lu, Xun Wang |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
Physics
Deep-level transient spectroscopy Metals and Alloys Surfaces and Interfaces Activation energy Electronic structure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Spectral line Surfaces Coatings and Films Electronic Optical and Magnetic Materials Quantum dot Materials Chemistry Coulomb Transient (oscillation) Atomic physics Quantum Computer Science::Databases |
| Zdroj: | Thin Solid Films. 369:65-68 |
| ISSN: | 0040-6090 |
| Popis: | The quantum confined energy levels in Ge quantum dots and the coulomb charging energy per added hole can be derived by deep level transient spectroscopy (DLTS). The number of holes captured by quantum dots can be controlled by varying the width of applied pulse voltage in the DLTS measurement. The Coulomb charging energy per added hole can be deduced from the energy step of the activation energy in the filling time dependent deep level transient spectra. The experiment results are confirmed by computer simulation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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