Measuring the drain voltage dependent series resistance in submicron LDD MOSFET's
| Autor: | F.M. Klaassen, J.A.M. Otten |
|---|---|
| Rok vydání: | 1992 |
| Předmět: |
Materials science
Equivalent series resistance Channel length modulation business.industry Internal resistance Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Electrical resistance and conductance Measuring principle MOSFET Optoelectronics Microelectronics Electrical and Electronic Engineering business Voltage |
| Zdroj: | Microelectronic Engineering. 19:703-706 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(92)90526-w |
| Popis: | Though already much attention was paid to the gate-voltage dependence of the MOSFET series resistance [1] the behaviour of the drain series resistance as a function of drain bias could not be measured until now. In this paper a general measurement principle to determine the series resistance in a LDD MOSFET as a function of drain bias is developed. Measured results for a 0.7 ?m device are given. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|