Growth Mechanism of ALD ZnO Films Investigated by Physical Characterization

Autor:	Diefeng Gu, Helmut Baumgart, Kandabara Tapily
Rok vydání:	2010
Předmět:	Materials science Chemical engineering Mechanism (sociology) Characterization (materials science)
Zdroj:	ECS Transactions. 33:355-363
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3485271
Popis:	From diethyl Zinc, Zinc oxide thin films deposited by atomic layer deposition (ALD) were characterized using X-ray diffraction, atomic force microscope, energy dispersive spectroscopy and Rutherford backscattering. The as-deposited ALD ZnO films showed good stoichiometry and thickness uniformity. The ALD ZnO films exhibit a preferential growth in the (002) plane or c-plane. The ZnO samples were annealed in air, nitrogen, and O2 ambient at different temperatures.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::f5e05e4e1e20aae49a784c70865a8e83 https://doi.org/10.1149/1.3485271 Zobrazit plný text záznamu